Onsemi - VN2410LRLRE

  1. Home
  2. Onsemi - VN2410LRLRE
VN2410LRLRE by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number VN2410LRLRE
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Terminal Finish: TIN LEAD;
Datasheet VN2410LRLRE Datasheet
In Stock2,286
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 20 pF
Maximum Drain Current (ID): .2 A
JEDEC-95 Code: TO-92
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Minimum DS Breakdown Voltage: 240 V
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 10 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,286 - -

Popular Products

Category Top Products

2N7002DW-7-F by Diodes Incorporated

2N7002DW-7-F

Diodes Incorporated

2N7002DW-7-F by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.115A drain current, and 7.5 ohm on-resistance. Ideal for switching applications in small outline packages, it operates in enhancement mode at up to 150°C temperature.
2N7002DWK-7 by Diodes Incorporated

2N7002DWK-7

Diodes Incorporated

Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
BS170-D27Z by Onsemi

BS170-D27Z

Onsemi

BS170-D27Z by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 0.5A Drain Current and 5 ohm On Resistance. Operating at 150°C, it comes in a ROUND package with THROUGH-HOLE terminals.
IRLML6346TRPBF by Infineon Technologies

IRLML6346TRPBF

Infineon Technologies

Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 3.4 A; Maximum Pulsed Drain Current (IDM): 17 A; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
MMBFJ201 by Fairchild Semiconductor

MMBFJ201

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; JESD-609 Code: e3; No. of Terminals: 3;
FDS4935BZ by Onsemi

FDS4935BZ

Onsemi

FDS4935BZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 6.9A Drain Current, and 0.022 ohm On Resistance. Ideal for SWITCHING applications, it features a RECTANGULAR package with GULL WING terminals and operates in ENHANCEMENT MODE at up to 150°C.
LND150K1-G by Supertex

LND150K1-G

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .013 A; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7002W by Micro Commercial Components

2N7002W

Micro Commercial Components

Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e0; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;
2N7002-G by Onsemi

2N7002-G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
2N7002 by Secos

2N7002

Secos

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
2N7002CK,215 by NXP Semiconductors

2N7002CK,215

NXP Semiconductors

NXP Semiconductors' 2N7002CK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.3A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.35W.
BSS84 by Lite-on Semiconductor

BSS84

Lite-on Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: 10 ohm; Terminal Form: GULL WING;
FDC5612 by Fairchild Semiconductor

FDC5612

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
TN2404K-T1-E3 by Vishay Intertechnology

TN2404K-T1-E3

Vishay Intertechnology

Vishay Intertechnology TN2404K-T1-E3 is a N-CHANNEL FET with 240V DS Breakdown Voltage, 0.2A Drain Current, and 4 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 150 °C.
BSS138W by Weitron Technology

BSS138W

Weitron Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;
BSS84AKM,315 by NXP Semiconductors

BSS84AKM,315

NXP Semiconductors

NXP Semiconductors' BSS84AKM,315 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.23A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a chip carrier package style. Operating at up to 150°C, it has an 8.5 ohm max drain-source on resistance.
FDC6327C by Fairchild Semiconductor

FDC6327C

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; JESD-30 Code: R-PDSO-G6; Maximum Drain Current (ID): 2.7 A;
SI2315BDS-T1-E3 by Vishay Intertechnology

SI2315BDS-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI2315BDS-T1-E3 is a P-CHANNEL FET with 12V DS Breakdown Voltage, 2.8A Drain Current, and 0.05 ohm On Resistance. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and -55 to 150 °C operating temperature range.
ZXMN10A07FTA by Diodes Incorporated

ZXMN10A07FTA

Diodes Incorporated

ZXMN10A07FTA by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 0.56A max drain current, and 0.7 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.806W. The transistor features a small outline package style and can withstand temperatures up to 150°C.
BS170 by Itt Semiconductor

BS170

Itt Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN LEAD;