Osram Opto Semiconductors - BPW34SE9601

  1. Home
  2. Osram Opto Semiconductors - BPW34SE9601
BPW34SE9601 by Osram Opto Semiconductors

Image shown is a representation only.

Manufacturer Osram Opto Semiconductors
Manufacturer's Part Number BPW34SE9601
Description PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 940; Configuration: SINGLE; Nominal Light Current: .08 mA; Size: 2.65 mm;
Datasheet BPW34SE9601 Datasheet
NAME DESCRIPTION
Maximum Dark Current: 30 nA
Shape: SQUARE
Configuration: SINGLE
Size: 2.65 mm
Packing Method: TR, 7 INCH
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PIN PHOTODIODE
Nominal Light Current: .08 mA
Peak Wavelength (nm): 940
Maximum Operating Temperature: 100 Cel
Maximum Reverse Voltage: 32 V
Semiconductor Material: Silicon
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HSDL-5420#1L1 by Broadcom

HSDL-5420#1L1

Broadcom

The Broadcom HSDL-5420#1L1 is a single PIN photodiode with peak wavelength of 875nm. It operates b/w -40 to 85°C, with min reverse breakdown voltage of 40V. Ideal for applications requiring infrared detection in compact spaces due to its small size of 1.78mm.
TEMD1020 by Vishay Intertechnology

TEMD1020

Vishay Intertechnology

The Vishay Intertechnology TEMD1020 is a single PIN photodiode with a peak wavelength of 940nm. Operating temperature ranges from -40 to 85°C, with a reverse breakdown voltage of 60V. Ideal for infrared applications, this round photodiode has a size of 1.9mm and max dark current of 10nA.
MICROFC-60035-SMT by Onsemi

MICROFC-60035-SMT

Onsemi

MICROFC-60035-SMT by Onsemi is a 6mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has reverse breakdown voltage of 24.2V, and dark current of 1750nA. Ideal for optoelectronic applications requiring high sensitivity and precision in surface mount configurations.
HSDL-5400#031 by Broadcom

HSDL-5400#031

Broadcom

PIN PHOTODIODE; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Nominal Light Current: .0016 mA; Minimum Reverse Breakdown Voltage: 40 V; Minimum Operating Temperature: -40 Cel;
SFH229FA by Siemens

SFH229FA

Siemens

PIN PHOTODIODE; Nominal Light Current: .0108 mA; Configuration: SINGLE; Size: 3 mm; No. of Functions: 1; Infrared (IR) Range: YES;
HR1104MH by Renesas Electronics

HR1104MH

Renesas Electronics

PIN PHOTODIODE; No. of Functions: 1; Size: 1.6 mm; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 1000; Minimum Reverse Breakdown Voltage: 20 V;
SPS603A1 by Onsemi

SPS603A1

Onsemi

Photo Diodes; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Maximum Dark Current: 3 nA;
BPW34FSR by Osram Opto Semiconductors

BPW34FSR

Osram Opto Semiconductors

Osram Opto Semiconductors' BPW34FSR is a single PIN photodiode with peak wavelength of 950nm. It operates b/w -40 to 100°C, with reverse breakdown voltage of 16V. Ideal for infrared applications, it has fast response time of 0.00000002s and surface mount feature.
VEMD4010X01 by Vishay Intertechnology

VEMD4010X01

Vishay Intertechnology

Vishay Intertechnology's VEMD4010X01 is a single PIN photodiode with peak wavelength of 910nm. It operates b/w -40 to 110°C, with max reverse voltage of 20V. Ideal for IR applications, it has nominal light current of 0.0024mA and max dark current of 3nA, suitable for surface mounting in various optoelectronic designs.
MICROFJ-SMTPA-60035-GEVB-PK by Onsemi

MICROFJ-SMTPA-60035-GEVB-PK

Onsemi

MICROFJ-SMTPA-60035-GEVB-PK by Onsemi is a 6.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 12000nA. Ideal for applications requiring high sensitivity in optoelectronics and photonics.
PS7-5B-TO5 by First Sensor Ag

PS7-5B-TO5

First Sensor Ag

Photo Diodes;
BPW34S(E9087) by Infineon Technologies

BPW34S(E9087)

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Response Time: .00000002 s; Maximum Dark Current: 30 nA;
MICROFC-SMTPA-30050-GEVB-TR by Onsemi

MICROFC-SMTPA-30050-GEVB-TR

Onsemi

AVALANCHE PHOTODIODE;
PH315 by Renesas Electronics

PH315

Renesas Electronics

Photo Diodes;
KOM2100A by Infineon Technologies

KOM2100A

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 80 Cel; Maximum Dark Current: 10 nA;
MICRORB-SMA-10020-GEVB-PK by Onsemi

MICRORB-SMA-10020-GEVB-PK

Onsemi

Photo Diodes;
TOPD320 by Toshiba

TOPD320

Toshiba

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 10 nA; Minimum Operating Temperature: -20 Cel; Maximum Reverse Voltage: 30 V; Semiconductor Material: InGaAs;
OPR5913 by Optek Technology

OPR5913

Optek Technology

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; No. of Functions: 1; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880; Size: 5 mm;
NDL5131P2C by Renesas Electronics

NDL5131P2C

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Semiconductor Material: Germanium; Maximum Reverse Voltage: 45 V; Minimum Operating Temperature: -40 Cel;
ARRAYRDM-0112A20-QFN-TR-E by Onsemi

ARRAYRDM-0112A20-QFN-TR-E

Onsemi

AVALANCHE PHOTODIODE;