Osram Opto Semiconductors - BPX84

  1. Home
  2. Osram Opto Semiconductors - BPX84
BPX84 by Osram Opto Semiconductors

Image shown is a representation only.

Manufacturer Osram Opto Semiconductors
Manufacturer's Part Number BPX84
Description PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Nickel (Sn/Ni); Peak Wavelength (nm): 850; JESD-609 Code: e2; Minimum Collector-emitter Breakdown Voltage: 32 V;
Datasheet BPX84 Datasheet
In Stock617
NAME DESCRIPTION
Maximum Dark Current: 50 nA
Shape: ROUND
Configuration: SEPARATE, 4 ELEMENTS
Sub-Category: Photo Transistors
Terminal Finish: Tin/Nickel (Sn/Ni)
JESD-609 Code: e2
Minimum Operating Temperature: -40 Cel
Mounting Feature: THROUGH HOLE MOUNT
No. of Functions: 4
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: .32 mA
Peak Wavelength (nm): 850
Maximum Response Time: .000008 s
Maximum Operating Temperature: 80 Cel
Minimum Collector-emitter Breakdown Voltage: 32 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
617 - -

Popular Products

Category Top Products

TIL616 by Texas Instruments

TIL616

Texas Instruments

TIL616 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It has max operating temp of 125°C and min temp of -60°C. With response time of 0.000008s, it's ideal for applications requiring precise light detection in harsh environments.
BPX82 by Infineon Technologies

BPX82

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 200 nA;
3037 by Nte Electronics

3037

Nte Electronics

The Nte Electronics 3037 is a single phototransistor with a size of 4.69 mm, ideal for light sensing applications. It has a nominal light current of 10 mA and max dark current of 200 nA, making it suitable for use in various optoelectronic circuits requiring precise light detection.
BPW17N by Vishay Telefunken

BPW17N

Vishay Telefunken

PHOTO TRANSISTOR; Configuration: SINGLE; Maximum Dark Current: 200 nA; Minimum Collector-emitter Breakdown Voltage: 32 V; Peak Wavelength (nm): 825; No. of Functions: 1;
TPS621 by Toshiba

TPS621

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Minimum Operating Temperature: -25 Cel; Maximum Dark Current: 100 nA;
TPS616(BC,F) by Toshiba

TPS616(BC,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Peak Wavelength (nm): 900; Maximum Power Dissipation: .075 W; Configuration: SINGLE;
TPS622(B,F) by Toshiba

TPS622(B,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Shape: ROUND; Maximum Dark Current: 100 nA; Minimum Operating Temperature: -25 Cel;
SFH3219-Z by Osram Opto Semiconductors

SFH3219-Z

Osram Opto Semiconductors

SFH3219-Z by Osram Opto Semiconductors is a single phototransistor with a peak wavelength of 990nm. It operates b/w -40°C to 100°C, with a nominal light current of 0.063mA and max dark current of 50nA. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2.575mm.
LS616 by Texas Instruments

LS616

Texas Instruments

LS616 by Texas Instruments is a single phototransistor with max temp of 125°C and min temp of -65°C. It has nominal light current of 6mA, response time of 0.000008s, and IR range. Ideal for applications requiring fast response time in temperature-sensitive environments.
LTR-4206 by Lite-on Technology

LTR-4206

Lite-on Technology

The Lite-on Technology LTR-4206 is a 3mm round photo transistor with max temp of 85°C and min temp of -40°C. It has nominal light current of 4mA, dark current of 100nA, and response time of 0.000005s. Ideal for optoelectronic applications requiring through hole mounting in the IR range.
SFH3130F by Infineon Technologies

SFH3130F

Infineon Technologies

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;
SFH309FA-3/4 by Osram Opto Semiconductors

SFH309FA-3/4

Osram Opto Semiconductors

SFH309FA-3/4 by Osram Opto Semiconductors is a single phototransistor with peak wavelength of 900nm. It operates b/w -40 to 100°C, with max power dissipation of 0.165W. Ideal for applications requiring IR detection and radial mounting, it has a collector-emitter breakdown voltage of 35V and on-state current of 0.015A.
OP802WSL by Optek Technology

OP802WSL

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Shape: ROUND; Size: 4.65 mm; Infrared (IR) Range: YES;
SFH3710-3/4 by Osram Opto Semiconductors

SFH3710-3/4

Osram Opto Semiconductors

Osram Opto SFH3710-3/4 is a single phototransistor with peak wavelength of 570nm. It operates b/w -40 to 85°C, with max on-state current of 0.02A. Ideal for surface mount applications requiring light sensing in the range of 0.004mA to 50nA dark current.
SFH309FA-4 by Siemens

SFH309FA-4

Siemens

PHOTO TRANSISTOR; Nominal Light Current: 1 mA; Maximum Operating Temperature: 100 Cel; Shape: ROUND; Maximum Dark Current: 200 nA; Additional Features: DAYLIGHT FILTER, HIGH RELIABILITY;
TPS606(LB)-B by Toshiba

TPS606(LB)-B

Toshiba

PHOTO TRANSISTOR; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .01 mA; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 20 V;
BPX81 by Infineon Technologies

BPX81

Infineon Technologies

BPX81 by Infineon Technologies is an 850nm phototransistor with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max power dissipation of 0.09W and a max dark current of 200nA. This phototransistor is commonly used in applications requiring through hole mounting and can handle a max on-state current of 0.05A.
BPW17N by Vishay Intertechnology

BPW17N

Vishay Intertechnology

The Vishay Intertechnology BPW17N is a 1.8mm single phototransistor with peak wavelength of 825nm. It operates at up to 100°C, with max power dissipation of 0.1W and response time of 0.0000016s. Ideal for applications requiring fast light detection in the infrared range, such as optical sensors and proximity detectors.
SFH317F3 by Infineon Technologies

SFH317F3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 900;
BPY62-3/4 by Osram Opto Semiconductors

BPY62-3/4

Osram Opto Semiconductors

Osram Opto Semiconductors' BPY62-3/4 is an 830nm peak wavelength phototransistor with a max temp of 125°C. It has a nominal light current of 5.8mA and max response time of 0.000007s. Ideal for applications requiring IR detection, it features through-hole mounting and can handle up to 0.1A on-state current.