Osram Opto Semiconductors - SFH3400-Z

  1. Home
  2. Osram Opto Semiconductors - SFH3400-Z
SFH3400-Z by Osram Opto Semiconductors

Image shown is a representation only.

Manufacturer Osram Opto Semiconductors
Manufacturer's Part Number SFH3400-Z
Description PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 20 V; No. of Functions: 1; Infrared (IR) Range: YES; Configuration: SINGLE; Shape: SQUARE;
Datasheet SFH3400-Z Datasheet
NAME DESCRIPTION
Other Names: SFH3400-Z-ND
Q65110A2629
475-SFH3400-ZTR
SFH3400Z
SFH3400-Z
SFH 3400-Z-ND
Maximum Dark Current: 100 nA
Shape: SQUARE
Configuration: SINGLE
Size: 2 mm
Minimum Operating Temperature: -40 Cel
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: .063 mA
Peak Wavelength (nm): 850
Maximum Operating Temperature: 100 Cel
Minimum Collector-emitter Breakdown Voltage: 20 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

ASDL-6620-C22 by Broadcom

ASDL-6620-C22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Size: 5 mm; Shape: ROUND;
TPS615(BC,F) by Toshiba

TPS615(BC,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Shape: ROUND; Maximum Operating Temperature: 85 Cel; No. of Functions: 1;
BPW77NA by Vishay Telefunken

BPW77NA

Vishay Telefunken

PHOTO TRANSISTOR; Shape: ROUND; Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Nominal Light Current: 10 mA; Additional Features: HIGH SENSITIVITY;
QSE113 by Qt Optoelectronics

QSE113

Qt Optoelectronics

QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.
TEKT5400S-ASZ by Telefunken Microelectronics

TEKT5400S-ASZ

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .1 A; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 100 nA;
TIL607 by Texas Instruments

TIL607

Texas Instruments

TIL607 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for surface mount applications in various industries.
SFH302-6 by Infineon Technologies

SFH302-6

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Operating Temperature: 100 Cel; Maximum Power Dissipation: .15 W;
SFH313FA by Infineon Technologies

SFH313FA

Infineon Technologies

SFH313FA by Infineon Technologies is a phototransistor with peak wavelength of 870nm. It operates b/w -55°C to 100°C, with max dark current of 200nA and on state current of 0.05A. Ideal for applications requiring through hole mounting such as light sensing in industrial automation and automotive systems.
TPS605 by Toshiba

TPS605

Toshiba

PHOTO DARLINGTON; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: 0 Cel; Infrared (IR) Range: NO; Maximum Power Dissipation: .075 W;
QSC112 by Onsemi

QSC112

Onsemi

QSC112 by Onsemi is a 3mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, has max power dissipation of 0.1W, and response time of 0.000004s. Ideal for IR applications due to its infrared range, it features tin/lead terminal finish and through hole mounting.
TPS601A-B by Toshiba

TPS601A-B

Toshiba

PHOTO TRANSISTOR; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 40 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 125 Cel; Additional Features: HIGH SENSITIVITY;
TPS607A-B by Toshiba

TPS607A-B

Toshiba

PHOTO DARLINGTON; Shape: ROUND; Minimum Operating Temperature: -25 Cel; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1;
ASDL-6270-D22 by Broadcom

ASDL-6270-D22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; No. of Functions: 1; Configuration: SINGLE; JESD-609 Code: e3;
ASDL-6770-C22 by Broadcom

ASDL-6770-C22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 85 Cel; Shape: ROUND;
HST9-B680 by Broadcom

HST9-B680

Broadcom

PHOTO TRANSISTOR;
TIL415 by Texas Instruments

TIL415

Texas Instruments

TIL415 by Texas Instruments is a phototransistor with peak wavelength of 930nm. It operates b/w -40°C to 85°C, dissipating max power of 0.05W. With fast response time of 0.000025s and max on state current of 0.0001A, it's ideal for light sensing applications.
OP520 by Tt Electronics Plc

OP520

Tt Electronics Plc

OP520 by Tt Electronics Plc is a phototransistor with peak wavelength of 935nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and max on state current of 0.02A. Ideal for surface mount applications requiring high sensitivity in optoelectronics.
OP800A by Optotek

OP800A

Optotek

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -65 Cel; Shape: ROUND; Peak Wavelength (nm): 890;
SFH303FA-4 by Infineon Technologies

SFH303FA-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum On State Current: .05 A; Minimum Operating Temperature: -40 Cel;
TEFT4300 by Vishay Telefunken

TEFT4300

Vishay Telefunken

PHOTO TRANSISTOR; Terminal Finish: Tin/Silver (Sn/Ag); JESD-609 Code: e2; Additional Features: HIGH SENSITIVITY; Configuration: SINGLE; Peak Wavelength (nm): 925;