Osram Opto Semiconductors - SFH320-4-Z

  1. Home
  2. Osram Opto Semiconductors - SFH320-4-Z
SFH320-4-Z by Osram Opto Semiconductors

Image shown is a representation only.

Manufacturer Osram Opto Semiconductors
Manufacturer's Part Number SFH320-4-Z
Description PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Minimum Collector-emitter Breakdown Voltage: 35 V; Maximum On State Current: .015 A; Packing Method: TR, 13 INCH; Nominal Light Current: .65 mA;
Datasheet SFH320-4-Z Datasheet
NAME DESCRIPTION
Maximum Dark Current: 50 nA
Shape: SQUARE
Configuration: SINGLE
Packing Method: TR, 13 INCH
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
Maximum On State Current: .015 A
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: .65 mA
Peak Wavelength (nm): 980
Maximum Power Dissipation: .165 W
Additional Features: TR, 7 INCH : 2000
Maximum Operating Temperature: 100 Cel
Minimum Collector-emitter Breakdown Voltage: 35 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIL132 by Texas Instruments

TIL132

Texas Instruments

TIL132 by Texas Instruments is a phototransistor with 9 separate elements, operating temperature range of -65 to 125°C. It has nominal light current of 2mA and max dark current of 100nA. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 50V.
TPS608A-B by Toshiba

TPS608A-B

Toshiba

PHOTO TRANSISTOR; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Shape: ROUND; Additional Features: SIDE VIEW;
SD1440-002L by Honeywell Sensing And Control

SD1440-002L

Honeywell Sensing And Control

SD1440-002L by Honeywell is a phototransistor with max operating temp of 125°C and min of -55°C. It has a max power dissipation of 0.075W, dark current of 100nA, and response time of 0.000015s. Ideal for applications requiring through hole mounting such as light sensing in various electronic devices.
TPS617-B by Toshiba

TPS617-B

Toshiba

PHOTO DARLINGTON; Maximum Dark Current: 250 nA; Additional Features: HIGH SENSITIVITY; SIDE VIEW; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 75 Cel; Nominal Light Current: 1.7 mA;
BPT-BP1A34 by American Bright Optoelectronics

BPT-BP1A34

American Bright Optoelectronics

American Bright Optoelectronics' BPT-BP1A34 is a 5mm round phototransistor with peak wavelength of 940nm. It has nominal light current of 0.6mA and min collector-emitter breakdown voltage of 30V. Ideal for applications requiring infrared detection, such as security systems and proximity sensors.
SFH303 by Infineon Technologies

SFH303

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 35 V; No. of Functions: 1; JESD-609 Code: e0;
SFH320-3/-4 by Infineon Technologies

SFH320-3/-4

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 860; Maximum Response Time: .000008 s;
SFH320-3/4-Z by Osram Opto Semiconductors

SFH320-3/4-Z

Osram Opto Semiconductors

PHOTO TRANSISTOR;
L14N2 by Renesas Electronics

L14N2

Renesas Electronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 150 Cel; Peak Wavelength (nm): 880; Maximum Response Time: .000014 s; Minimum Operating Temperature: -55 Cel;
BPX38-6 by Infineon Technologies

BPX38-6

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum Response Time: .000015 s;
SPS181C by Onsemi

SPS181C

Onsemi

SPS181C by Onsemi is a phototransistor with peak wavelength of 880nm. It operates b/w -20 °C to 75°C, dissipating max power of 0.07W. With max on state current of 0.02A and dark current at 200nA, it's ideal for through hole mounting in various applications.
SFH3401-3 by Infineon Technologies

SFH3401-3

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 85 Cel;
TPS611(F) by Toshiba

TPS611(F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Additional Features: HIGH SENSITIVITY; Shape: ROUND; Maximum Power Dissipation: .15 W; Infrared (IR) Range: YES;
TIL610 by Texas Instruments

TIL610

Texas Instruments

TIL610 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for through hole mounting in various applications.
SFH3219-Z by Osram Opto Semiconductors

SFH3219-Z

Osram Opto Semiconductors

SFH3219-Z by Osram Opto Semiconductors is a single phototransistor with a peak wavelength of 990nm. It operates b/w -40°C to 100°C, with a nominal light current of 0.063mA and max dark current of 50nA. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2.575mm.
TIL414 by Texas Instruments

TIL414

Texas Instruments

TIL414 by Texas Instruments is a phototransistor with peak wavelength of 930nm. It operates b/w -40°C to 85°C, dissipating max power of 0.05W. With fast response time of 0.000008s, it's ideal for applications requiring through hole mounting and low dark current at 50nA.
SDP8476-201 by Honeywell Sensing And Control

SDP8476-201

Honeywell Sensing And Control

Honeywell Sensing And Control's SDP8476-201 is a phototransistor with peak wavelength of 850nm. It operates b/w -40°C to 85°C, dissipating max power of 0.1W. Ideal for applications requiring THROUGH HOLE MOUNT feature and low dark current of 100nA.
SFH303FA by Infineon Technologies

SFH303FA

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Infrared (IR) Range: YES; No. of Functions: 1; Minimum Operating Temperature: -40 Cel;
BP103BF4 by Infineon Technologies

BP103BF4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Maximum Dark Current: 100 nA; Maximum On State Current: .05 A;
OP804SL by Tt Electronics Plc

OP804SL

Tt Electronics Plc

OP804SL by Tt Electronics Plc is a single configuration phototransistor with a max operating temperature of 125°C. It has a nominal light current of 7mA and min collector-emitter breakdown voltage of 30V. Ideal for applications requiring infrared detection in environments ranging from -65°C to 125°C.