PNY Technologies - P-SDU4GB4-EF/BG

P-SDU4GB4-EF/BG by PNY Technologies

Image shown is a representation only.

Manufacturer	PNY Technologies
Manufacturer's Part Number	P-SDU4GB4-EF/BG
Description	PNY; Product Type: microSD; Storage Capacity: 4 GB; Number of Memory Cards: 1; Form Factor: microSD; Product Name: 4GB microSD Card;

P-SDU4GB4-EF/BG Technical Details

NAME	DESCRIPTION
Brand Name:	PNY
Form Factor:	microSD
Number of Memory Cards:	1
Product Type:	microSD
Product Name:	4GB microSD Card
Storage Capacity:	4 GB

Popular Products

EU2B-YS3203C

Idec

ROTARY SWITCH;

1N4148WS

Lite-on Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4148

Temic Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

SMBJ18CA

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2N7002

Nte Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;

LM358N

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

EEAGA1H4R7

Panasonic

Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.

LM358DT

STMicroelectronics

LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.

2N7002

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;

2N2222A

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;