Renesas Electronics - 1S2208(B)

BB804-3 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA, operates up to 100 °C, and comes in a compact rectangular package with dual terminals. Ideal for tuning circuits and RF applications, it ensures efficient performance in small form factors.

MMVL409T1 by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 29 pF and operates at a max power dissipation of 0.2 W. This single-configured diode in small outline package is ideal for RF tuning circuits.

The NXP Semiconductors BB148 is a varactor diode with a max reverse current of 0.01 uA and nominal capacitance of 39.3 pF. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring variable capacitance diodes in small outline packages. With a min operating temperature of -55 °C and max of 125 °C, it offers reliable performance across a wide temperature range.

BBY39TRL by NXP Semiconductors is a surface-mount varactor diode featuring a dual-element configuration with a min capacitance ratio of 8. It comes in a small outline package made of plastic/epoxy, ideal for RF tuning applications. This silicon-based diode offers reliable performance in compact designs.

BB145B,115 by NXP Semiconductors is a varactor diode with 6.8 pF capacitance and 6V breakdown voltage. It operates b/w -55 to 150°C, suitable for applications requiring variable capacitance like tuning circuits in RF systems. This single-config diode comes in a small outline package with dual terminals for surface mount assembly.

1N4792 by Onsemi is a varactor diode with 22pF capacitance, 20V breakdown voltage, and 0.5W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 150°C.

1N5440 by Onsemi is a Varactor Diode with a Min Quality Factor of 450, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 4.7 pF. It is used in applications requiring variable capacitance diodes for tuning circuits with a voltage range from -65 to 150 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SMV2025-040LF by Skyworks Solutions is a single hyperabrupt varactor diode with 4.65 pF nominal capacitance, suitable for ultra high frequency applications. It operates b/w -55 to 175 °C and has a max power dissipation of 0.25 W, making it ideal for surface mount designs in RF circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

The Onsemi MV209RLRP is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this single-configured diode has a max power dissipation of 0.2 W. Its through-hole terminal form and silicon element material make it suitable for various RF tuning circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MV1403 by Onsemi is a single varactor diode with hyperabrupt capacitance classification. It features a min quality factor of 200, nominal capacitance of 175 pF, and min breakdown voltage of 12 V. Ideal for applications requiring precise tuning in RF circuits or frequency modulators.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MV2109RLRPG by Onsemi is a single varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

MV2105RL by Onsemi is a single varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and breakdown voltage of 30 V. It is used in applications requiring variable capacitance control at temperatures up to 150 °C.

The Onsemi SVC364 is a varactor diode with 2 elements, common cathode config, and 52 pF nominal capacitance. It has a min breakdown voltage of 16 V and is ideal for RF applications requiring variable capacitance diodes in small outline packages.

MV7404T1 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, ideal for very high frequency applications. It features a nominal capacitance of 120 pF, breakdown voltage of 12 V, and max power dissipation of 0.8 W. This surface-mount diode in small outline package is designed for high-frequency circuit tuning.

The Onsemi SVC346 is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and a Nominal Diode Capacitance of 64 pF. Commonly used in RF applications, it features a Min Breakdown Voltage of 33 V and is designed for variable capacitance needs.