Renesas Electronics - 1S2209(B)

MMVL229AT1 by Onsemi is a varactor diode with 15 pF nominal capacitance, 15 V peak reverse voltage, and 6.67% capacitance tolerance. It is designed for ultra high frequency applications in small outline packages with gull wing terminals, suitable for surface mount configurations.

The Toshiba 1SV204 is a single varactor diode with a max reverse current of 0.01 uA and min breakdown voltage of 30 V. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring variable capacitance diodes in small outline packages. The diode's silicon element material and flat terminal form enhance its performance up to an operating temperature of 125 °C.

The Onsemi MV1404 is a single hyperabrupt varactor diode with 120pF nominal capacitance, 12V breakdown voltage, and 200 min quality factor. It is used in applications requiring variable capacitance control at temperatures up to 125 °C, such as RF tuning circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB204B-TAPE-REEL by NXP Semiconductors is a variable capacitance diode featuring a common cathode configuration with 2 elements. It has a min capacitance ratio of 2.5 and comes in a cylindrical plastic/epoxy package. Ideal for RF tuning applications, it ensures reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5684 by Onsemi is a varactor diode with 12pF nominal capacitance, abrupt variable capacitance classification, and 550 min quality factor. It operates b/w -65 to 175 °C and is ideal for RF tuning applications due to its low reverse current of 0.00000002 uA.

BB241 by NXP Semiconductors is a single, surface-mount varactor diode designed for very high frequency applications. It features a max reverse current of 0.01 µA and operates up to 100 °C with a breakdown voltage of 32 V. Ideal for tuning circuits and RF applications, it offers excellent capacitance variation.

BB219 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BB219TRL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 16 V; Minimum Quality Factor: 190; Nominal Diode Capacitance: 37 pF;