Renesas Electronics - 1SV218

  1. Home
  2. Renesas Electronics - 1SV218
1SV218 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 1SV218
Description VARIABLE CAPACITANCE DIODE;
Datasheet 1SV218 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MDX580N by Texas Instruments

MDX580N

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .1 pF; Minimum Quality Factor: 20;
LV2205ZL1 by Onsemi

LV2205ZL1

Onsemi

LV2205ZL1 by Onsemi is a single varactor diode with a min quality factor of 400, ideal for applications requiring variable capacitance. With a nominal capacitance of 15 pF and a breakdown voltage of 25 V, this cylindrical diode can operate at temperatures up to 150 °C, making it suitable for high-performance electronic circuits.
MMBV2108L by Onsemi

MMBV2108L

Onsemi

MMBV2108L by Onsemi is a varactor diode with a min quality factor of 300, nominal capacitance of 27 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems.
BB201T/R by NXP Semiconductors

BB201T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BBY5802VH6327XTSA1 by Infineon Technologies

BBY5802VH6327XTSA1

Infineon Technologies

Infineon's BBY5802VH6327XTSA1 is a single hyperabrupt varactor diode with 18.3 pF capacitance, 10 V breakdown voltage, and -55 to 150°C operating range. Ideal for applications requiring variable capacitance in small outline packages like RF tuning circuits.
1N4810 by Onsemi

1N4810

Onsemi

1N4810 by Onsemi is a varactor diode with 39pF nominal capacitance, abrupt variable capacitance classification, and 61V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 15 and low reverse current of 0.005uA.
BB178LXT/R by NXP Semiconductors

BB178LXT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 32 V;
934047500115 by NXP Semiconductors

934047500115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2002 by Api Technologies

2002

Api Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N5148A by Onsemi

1N5148A

Onsemi

1N5148A by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 47 pF, and breakdown voltage of 60V. It is used in RF tuning circuits for applications requiring variable capacitance control.
BB157 by NXP Semiconductors

BB157

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB147T/R by NXP Semiconductors

BB147T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC272-TL-E by Onsemi

SVC272-TL-E

Onsemi

VARIABLE CAPACITANCE DIODE; Maximum Time At Peak Reflow Temperature (s): 30; Diode Element Material: SILICON; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH;
MV2101RLRA by Onsemi

MV2101RLRA

Onsemi

MV2101RLRA by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. It is ideal for RF tuning applications due to its variable capacitance property and can operate at temperatures up to 150 °C.
BB187 by NXP Semiconductors

BB187

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB179LX by NXP Semiconductors

BB179LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MV1638 by Onsemi

MV1638

Onsemi

MV1638 by Onsemi is a single varactor diode with 33pF capacitance, 20V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.
BB804Y215 by NXP Semiconductors

BB804Y215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC251SPA by Onsemi

SVC251SPA

Onsemi

SVC251SPA by Onsemi is a single hyperabrupt varactor diode with 23pF nominal capacitance, 12V breakdown voltage, and 1.7 min capacitance ratio. It is used in RF applications for frequency tuning due to its silicon element material and through-hole terminal form.
MDX599C by Texas Instruments

MDX599C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 30;