Renesas Electronics - 2SB804(0)-T1-AZ

  1. Home
  2. Renesas Electronics - 2SB804(0)-T1-AZ
2SB804(0)-T1-AZ by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SB804(0)-T1-AZ
Description Power Bipolar Transistors;
Datasheet 2SB804(0)-T1-AZ Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP112 by Rectron

TIP112

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSFM-T3;
TIP142 by Continental Device India

TIP142

Continental Device India

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Transistor Application: AMPLIFIER;
JANTX2N3055 by Solitron Devices

JANTX2N3055

Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD140-16 by SPC TECHNOLOGY/ MULTICOMP

BD140-16

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 100; Terminal Form: THROUGH-HOLE;
JAN2N3055 by Api Technologies

JAN2N3055

Api Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP125 by Micro Commercial Components

TIP125

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Position: SINGLE;
TIP122 by Power Innovations

TIP122

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;
MJE350 by Motorola

MJE350

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON; JESD-609 Code: e0;
MJE3055T by Motorola

MJE3055T

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP110 by SPC TECHNOLOGY/ MULTICOMP

TIP110

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;
TIP122 by Fairchild Semiconductor

TIP122

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V;
TIP31C by Micro Electronics

TIP31C

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP112 by Motorola

TIP112

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
TIP112 by Diotec Semiconductor Ag

TIP112

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;
TIP42C by Inchange Semiconductor

TIP42C

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP35C by New England Semiconductor

TIP35C

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Application: SWITCHING;
BD140 by Central Semiconductor

BD140

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP47 by New Jersey Semiconductor Products

TIP47

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON; No. of Elements: 1;
NJVMJD44H11T4G by Onsemi

NJVMJD44H11T4G

Onsemi

NJVMJD44H11T4G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates b/w -55 to 150°C. This small outline package with Gull Wing terminals is AEC-Q101 compliant.
TIP127 by Micro Commercial Components

TIP127

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; Terminal Finish: TIN LEAD;