Renesas Electronics - 2SC3510RF

  1. Home
  2. Renesas Electronics - 2SC3510RF
2SC3510RF by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SC3510RF
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4500 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: WIRE;
Datasheet 2SC3510RF Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 4500 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
JEDEC-95 Code: TO-92
Polarity or Channel Type: NPN
Surface Mount: NO
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 12 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Maximum Collector-Base Capacitance: 1.5 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BFR380L3E6327XTMA1 by Infineon Technologies

BFR380L3E6327XTMA1

Infineon Technologies

RF Small Signal Bipolar Transistors; JESD-609 Code: e4; Terminal Finish: GOLD; Moisture Sensitivity Level (MSL): 1;
BFT92T/R by NXP Semiconductors

BFT92T/R

NXP Semiconductors

The NXP Semiconductors BFT92T/R is a PNP RF BJT transistor with 3 terminals, ideal for amplifier applications in the UHF band. It has a max power dissipation of 0.3W, hFE of 20, and fT of 5000MHz. The package is a small outline with gull wing terminals and can operate up to 150°C.
934056691115 by NXP Semiconductors

934056691115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .015 A; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING;
2SC5226A-4-TL-E by Sanyo Semiconductor

2SC5226A-4-TL-E

Sanyo Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .07 A; Package Body Material: PLASTIC/EPOXY;
2N3572 by Texas Instruments

2N3572

Texas Instruments

2N3572 by Texas Instruments is an NPN BJT transistor with a max fT of 1500 MHz. It has a max IC of 0.05 A and operates at up to 175°C. Ideal for amplifier applications in the UHF band, this transistor features a cylindrical package with isolated case connection.
HFA3127BZ by Intersil

HFA3127BZ

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; JEDEC-95 Code: MS-012AC;
BFR520 by New Jersey Semiconductor Products

BFR520

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 15 V;
LM3046MX by Texas Instruments

LM3046MX

Texas Instruments

LM3046MX by Texas Instruments is an NPN BJT with 5 elements, suitable for amplifier applications in the VHF band. It has a max fT of 550 MHz, hFE of 40, and can handle up to 0.05 A collector current. The package is a small outline with Gull Wing terminals and can dissipate 0.75 W at 85°C.
934064959115 by NXP Semiconductors

934064959115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;
SD1416 by STMicroelectronics

SD1416

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;
NTE311 by Nte Electronics

NTE311

Nte Electronics

NTE311 by Nte Electronics is an NPN RF BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 5W, fT of 800MHz, and hFE of 25, making it suitable for high-frequency signal amplification. The package style is cylindrical with a metal body and wire terminals.
BFR92ALT1 by Motorola

BFR92ALT1

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4500 MHz; Maximum Collector Current (IC): .025 A; Maximum VCEsat: .5 V;
2SC5415AF-TD-E by Onsemi

2SC5415AF-TD-E

Onsemi

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; Peak Reflow Temperature (C): 260; JESD-609 Code: e6;
2N3866 by STMicroelectronics

2N3866

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
934066851115 by NXP Semiconductors

934066851115

NXP Semiconductors

RF Small Signal Bipolar Transistors;
BFT92,215 by NXP Semiconductors

BFT92,215

NXP Semiconductors

NXP Semiconductors' BFT92,215 is a PNP RF BJT with 3 terminals. It operates in the ultra-high frequency band up to 5 GHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, this transistor can handle a max collector-emitter voltage of 15V at an operating temp of 150°C.
MPS5179RLRAG by Onsemi

MPS5179RLRAG

Onsemi

MPS5179RLRAG by Onsemi is a NPN RF BJT with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and fT of 900MHz. The transistor operates at up to 150 °C, with VCE(max) of 12V and IC(max) of 0.05A.
2SC5066-O,LF by Toshiba

2SC5066-O,LF

Toshiba

Toshiba's 2SC5066-O,LF is an NPN RF BJT transistor with a max fT of 7000 MHz. It has a max IC of 0.03 A and hFE of 80, suitable for amplifier applications in the UHF band. The package is a small outline with gull wing terminals, making it ideal for surface mount designs.
JANTX2N2907AUBC by Vpt Components

JANTX2N2907AUBC

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; No. of Terminals: 3; Terminal Position: DUAL;
MMBTH24-7-F by Diodes Incorporated

MMBTH24-7-F

Diodes Incorporated

Diodes Inc. MMBTH24-7-F is a NPN BJT transistor for RF applications. Features include 400MHz fT, 40V VCEO, and 0.3W Ptot. Ideal for ultra-high frequency amplification in compact SOT package with Gull Wing terminals.