Infineon Technologies - BFP780H6327XTSA1

  1. Home
  2. Infineon Technologies - BFP780H6327XTSA1
BFP780H6327XTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFP780H6327XTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20000 MHz; Maximum Collector Current (IC): .12 A; Terminal Finish: TIN;
Datasheet BFP780H6327XTSA1 Datasheet
In Stock16
NAME DESCRIPTION
Nominal Transition Frequency (fT): 20000 MHz
Other Names: BFP780H6327XTSA1TR
BFP780H6327XTSA1-ND
BFP780H6327XTSA1DKR
SP000924978
BFP780H6327XTSA1CT
2156-BFP780H6327XTSA1TR
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .12 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
No. of Terminals: 4
Maximum Collector-Emitter Voltage: 6.1 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Case Connection: EMITTER
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
16 - -

Popular Products

Category Top Products

BFR93AR by Vishay Telefunken

BFR93AR

Vishay Telefunken

RF Small Signal Bipolar Transistors; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
SS9018D by Onsemi

SS9018D

Onsemi

SS9018D by Onsemi is an NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 28, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.
HFA3127BZ96 by Renesas Electronics

HFA3127BZ96

Renesas Electronics

Renesas Electronics' HFA3127BZ96 is an NPN RF BJT with 5 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 8V and a nominal transition frequency of 8000MHz. This surface-mount transistor has a small outline package with 16 terminals in gull-wing form.
BF959RL1G by Onsemi

BF959RL1G

Onsemi

BF959RL1G by Onsemi is a NPN BJT transistor with 3 terminals. It operates in the very high frequency band up to 700 MHz, making it suitable for amplifier applications. With a max power dissipation of 1.5W and a collector-emitter voltage of 20V, it can handle various RF signal amplification tasks efficiently.
MPSA10 by Onsemi

MPSA10

Onsemi

MPSA10 by Onsemi is an NPN BJT transistor with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in RF applications due to its ultra-high frequency band capability. The package style is cylindrical with through-hole terminals, making it suitable for various electronic designs.
BF224RLRM by Onsemi

BF224RLRM

Onsemi

BF224RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 30V and max operating temp of 150 °C. It operates in the very high frequency band at 850MHz, making it ideal for applications requiring high-speed signal amplification in electronic circuits.
BFU550AR by NXP Semiconductors

BFU550AR

NXP Semiconductors

The NXP Semiconductors BFU550AR is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max operating temperature of 150°C, collector-emitter voltage of 16V, and transition frequency of 11GHz. This small outline package has Gull Wing terminals and can handle up to 0.08A collector current.
CA3083M96 by Intersil

CA3083M96

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G16;
BFG425WT/R by NXP Semiconductors

BFG425WT/R

NXP Semiconductors

NXP Semiconductors' BFG425WT/R is a NPN RF BJT transistor with 4 terminals, ideal for L Band applications. It has a max power dissipation of 0.135W, fT of 25GHz, and hFE of 50. Suitable for switching purposes with a max collector current of 0.03A and max collector-emitter voltage of 4.5V.
BFU520XR by NXP Semiconductors

BFU520XR

NXP Semiconductors

The NXP Semiconductors BFU520XR is an NPN RF BJT transistor with a max fT of 10500 MHz. It has a collector-emitter voltage of 16V and operates in the L band frequency range. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mount assembly.
SS9018H by Onsemi

SS9018H

Onsemi

SS9018H by Onsemi is an NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 97, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.
2N3904 by Thomson-csf Semiconductors

2N3904

Thomson-csf Semiconductors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified; Terminal Position: BOTTOM;
2SC4399 by Onsemi

2SC4399

Onsemi

RF Small Signal Bipolar Transistors;
HFA3127RZ96 by Integrated Device Technology

HFA3127RZ96

Integrated Device Technology

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; JESD-609 Code: e3;
SD1222-6 by STMicroelectronics

SD1222-6

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;
BFU710F,115 by NXP Semiconductors

BFU710F,115

NXP Semiconductors

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
MPS918ZL1 by Onsemi

MPS918ZL1

Onsemi

MPS918ZL1 by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. It has a fT of 600 MHz and a max collector-emitter voltage of 15V, making it ideal for ultra-high frequency amplifier applications. With a package style of cylindrical and through-hole terminals, it offers high performance in RF circuits.
2SC5662T2LP by ROHM

2SC5662T2LP

ROHM

ROHM 2SC5662T2LP is a NPN RF BJT transistor with max. fT of 3200 MHz, hFE of 56, and VCE(max) of 11V. Ideal for S Band applications like amplifiers due to its small outline package and high transition frequency capability.
MPSH10 by Semiconductor Technology

MPSH10

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
KSC1674Y by Onsemi

KSC1674Y

Onsemi

KSC1674Y by Onsemi is an NPN BJT transistor with max VCEsat of 0.3V, hFE of 120, and fT of 600MHz. Ideal for amplifier applications in the ultra-high frequency band due to its low power dissipation and high transition frequency. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.