Renesas Electronics - 2SC4226-A-R25

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .07 A; Additional Features: LOW NOISE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;

The Onsemi MPSH10 is an NPN RF BJT transistor with a max fT of 650 MHz, ideal for amplifier applications. With a max IC of 0.1A and hFE of 60, it operates at up to 150°C. Its package style is cylindrical with through-hole terminals, making it suitable for ultra-high frequency band circuits.

MCH4014-TL-H by Onsemi is an NPN RF BJT with max power dissipation of 0.35W, fT of 8000MHz, and hFE of 60. Ideal for applications requiring high-frequency signal amplification in a surface-mount configuration.

ROHM UMX5NTR is an NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W and operates at up to 150°C. With a transition frequency of 3200MHz, it offers high performance in a small outline package suitable for surface mount assembly.

FMB3946 by Onsemi is a RF BJT transistor with NPN and PNP channels. It has 2 elements, 6 terminals, hFE of 30, max temp of 150°C, Vce of 40V, and fT of 200MHz. Ideal for switching applications due to its fast ton (38ns) and toff (190ns) times in a small outline package.

Fairchild Semiconductor's PN5179D26Z is an NPN BJT transistor with a max collector-emitter voltage of 12V and a transition frequency of 900MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a max power dissipation of 0.6W. The package style is cylindrical with a matte tin terminal finish, suitable for through-hole mounting at temperatures up to 150°C.

MPSH10RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp rating (150 °C). The transistor's through-hole package makes it suitable for various cylindrical style designs.

MMBTH69LT1 by Onsemi is a PNP RF BJT transistor with 3 terminals, suitable for amplifier applications in the UHF band. It has a max collector-emitter voltage of 15V and fT of 2000MHz. This surface-mount transistor features a plastic/epoxy body, gull wing terminals, and low collector-base capacitance at 0.35pF.

NXP Semiconductors' BLF871 is an NPN RF BJT transistor with a ceramic-metal-sealed co-fired package. It operates in the ultra-high frequency band, suitable for amplifier applications. With a max operating temperature of 200°C and low collector-base capacitance of 1pF, it offers high performance in a flange mount package.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): SMALL OUTLINE;

The Onsemi BF224RLRE is an NPN RF BJT with a max. collector-emitter voltage of 30V and max. collector current of 0.05A. Operating up to 150 °C, it has a transition frequency of 850MHz, making it ideal for high-frequency applications in very high frequency bands. The transistor's through-hole package with cylindrical shape and bottom terminal position ensures easy installation and reliable performance.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Time At Peak Reflow Temperature (s): 30;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1;

RF Small Signal Bipolar Transistors;

MPS5179RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 900MHz. It is ideal for amplifier applications in the very high-frequency band, featuring a single configuration in a cylindrical package with through-hole terminals.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5200 MHz; Maximum Collector Current (IC): .008 A; Transistor Element Material: SILICON;

KSC1730O by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 1100MHz, and can handle a max IC of 0.05A.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;