Renesas Electronics - 2SC5757WE-TR-E

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2SC5757WE-TR-E by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SC5757WE-TR-E
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Power Dissipation (Abs): .08 W; Maximum Collector Current (IC): .08 A;
Datasheet 2SC5757WE-TR-E Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 6500 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .08 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .08 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 80
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 3.5 V
Maximum Collector-Base Capacitance: 1.5 pF
Peak Reflow Temperature (C): NOT SPECIFIED
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