Renesas Electronics - 2SC5787-T3

  1. Home
  2. Renesas Electronics - 2SC5787-T3
2SC5787-T3 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SC5787-T3
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20000 MHz; Maximum Power Dissipation (Abs): .105 W; Maximum Collector Current (IC): .035 A;
Datasheet 2SC5787-T3 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 20000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .035 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .105 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 3 V
Additional Features: HIGH RELIABILITY
Maximum Collector-Base Capacitance: .3 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

KSC1393Y by Onsemi

KSC1393Y

Onsemi

The Onsemi KSC1393Y is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, DC current gain of 90, and operates in the very high frequency band up to 700 MHz. With a max collector-emitter voltage of 30V and power dissipation of 0.25W, it is suitable for high-frequency amplification tasks.
MPS6507RLRE by Onsemi

MPS6507RLRE

Onsemi

MPS6507RLRE by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 20V and max operating temp of 150 °C. Ideal for amplifier applications, it has a max collector current of 0.05A and transition frequency of 800MHz, housed in a cylindrical package with through-hole terminals.
MMBTH81D87Z by Fairchild Semiconductor

MMBTH81D87Z

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
934067711235 by NXP Semiconductors

934067711235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
NSVF6003SB6T1G by Onsemi

NSVF6003SB6T1G

Onsemi

NSVF6003SB6T1G by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. With a min hFE of 100 and fT of 7000 MHz, it's ideal for amplifier applications in the UHF band. This small outline package has Gull Wing terminals and can handle up to 0.15A collector current.
2N2369A by Hi-tron Semiconductor

2N2369A

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;
START499TR by STMicroelectronics

START499TR

STMicroelectronics

START499TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.9 W and operating temp up to 150 °C. It supports ultra-high frequency with a transition frequency of 42 GHz. This compact surface mount transistor ensures efficient performance in small electronic devices.
BFS17 by ROHM

BFS17

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;
MMBTH10LT3G by Onsemi

MMBTH10LT3G

Onsemi

MMBTH10LT3G by Onsemi is an NPN RF BJT with a max fT of 650 MHz, hFE of 60, and VCEO of 25V. Ideal for UHF applications due to its small outline package and high transition frequency. Suitable for surface mount designs requiring ultra-high frequency band performance.
MMBTH10-4LT1 by Onsemi

MMBTH10-4LT1

Onsemi

MMBTH10-4LT1 by Onsemi is an NPN RF BJT with a max fT of 800 MHz. It has a max IC of 0.025 A and hFE of 120, suitable for UHF applications. This small outline transistor operates up to 150 °C, making it ideal for high-frequency circuits in compact designs.
BFR93A,215 by NXP Semiconductors

BFR93A,215

NXP Semiconductors

NXP Semiconductors' BFR93A,215 is a NPN RF BJT transistor with max. freq. of 6000 MHz and hFE of 40, ideal for L Band applications like amplifiers. It has a max. power dissipation of 0.35 W, operates up to 175°C, and features a small outline package with gull wing terminals for surface mount assembly.
2SA1857T-5 by Onsemi

2SA1857T-5

Onsemi

Onsemi's 2SA1857T-5 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 135, and fT of 750MHz. Ideal for amplifier applications in the very high frequency band due to its small outline package and max operating temperature of 150 °C.
BFP740FH6327XTSA1 by Infineon Technologies

BFP740FH6327XTSA1

Infineon Technologies

BFP740FH6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 14 dB min power gain, ideal for amplifier applications in X Band frequencies. It features a max operating temperature of 150°C, 0.16 W power dissipation, and 45000 MHz nominal transition frequency.
NSVF6001SB6T1G by Onsemi

NSVF6001SB6T1G

Onsemi

NSVF6001SB6T1G by Onsemi is an NPN BJT transistor with 6 terminals, operating at -55 to 150 °C. It has a max collector-emitter voltage of 12V and fT of 6700 MHz, suitable for ultra-high frequency amplifier applications in AEC-Q101 standard environments.
NE85633-T1B-A by Renesas Electronics

NE85633-T1B-A

Renesas Electronics

NE85633-T1B-A by Renesas Electronics is a NPN BJT transistor for RF applications. It operates in the ultra high frequency band with a transition frequency of 7000 MHz. This single configuration transistor has a max collector-emitter voltage of 12V and is suitable for amplifier circuits in small outline packages.
SS9018E by Onsemi

SS9018E

Onsemi

SS9018E by Onsemi is a NPN BJT transistor for RF applications. With max VCEsat of 0.5V, it operates at 1100MHz fT and handles up to 0.05A IC. Ideal for amplifier circuits in L Band frequencies with a max temp of 150 °C.
SD1278 by STMicroelectronics

SD1278

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;
CS9018 by Onsemi

CS9018

Onsemi

CS9018 by Onsemi is a N-CHANNEL BJT with VCEsat of 0.6V, hFE of 29, and fT of 600MHz. Ideal for high-frequency applications due to its low VCEsat and high transition frequency. Packaged in plastic/epoxy, it has 3 terminals and can handle up to 12V.
2SC5277A-2-TL-E by Onsemi

2SC5277A-2-TL-E

Onsemi

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
BFS17 by Temic Semiconductors

BFS17

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2100 MHz; Maximum Collector Current (IC): .025 A; Package Body Material: PLASTIC/EPOXY;