Renesas Electronics - 2SD1922TZ

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2SD1922TZ by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SD1922TZ
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 250; Terminal Position: BOTTOM;
Datasheet 2SD1922TZ Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .8 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 250
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 25 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
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