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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 2SD2106-E |
| Description | NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON; Qualification: Not Qualified; |
| Datasheet | 2SD2106-E Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 6 A |
| Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 1000 |
| Terminal Finish: | TIN COPPER |
| JESD-609 Code: | e2 |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 120 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Case Connection: | ISOLATED |
| Moisture Sensitivity Level (MSL): | 1 |
