Renesas Electronics - 2SJ325-Z-E2-AZ

  1. Home
  2. Renesas Electronics - 2SJ325-Z-E2-AZ
2SJ325-Z-E2-AZ by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SJ325-Z-E2-AZ
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 4 A;
Datasheet 2SJ325-Z-E2-AZ Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 20 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 4 A
Maximum Drain Current (Abs) (ID): 4 A
Sub-Category: Other Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FDG6301N by Onsemi

FDG6301N

Onsemi

The Onsemi FDG6301N is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a 25V DS Breakdown Voltage, 0.22A Drain Current, and 4 ohm On Resistance. With GULL WING terminals and SMALL OUTLINE package style, it operates in ENHANCEMENT MODE at up to 150°C.
FDN339AN by Fairchild Semiconductor

FDN339AN

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain-Source On Resistance: .035 ohm; Terminal Form: GULL WING;
BS170G by Onsemi

BS170G

Onsemi

BS170G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 0.35W and can withstand temperatures up to 150°C.
AO3407A by Alpha & Omega Semiconductor

AO3407A

Alpha & Omega Semiconductor

AO3407A by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.3A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package, operating at up to 150°C.
2N7002BKVL by Nexperia

2N7002BKVL

Nexperia

2N7002BKVL by Nexperia is a N-CHANNEL FET with 60V DS Breakdown Voltage. It's used for SWITCHING applications in ENHANCEMENT MODE. Features include 0.35A Drain Current, 1.6 ohm On Resistance, and -55 to 150 °C Operating Temperature range.
NUD3124LT1G by Onsemi

NUD3124LT1G

Onsemi

NUD3124LT1G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 0.15A ID, and 1.4 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features built-in diode and resistor in a small outline package for surface mount assembly.
ZXMP6A13FTA by Diodes Incorporated

ZXMP6A13FTA

Diodes Incorporated

ZXMP6A13FTA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, 1.1A Drain Current, and 0.4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150°C.
2N7002 by Infineon Technologies

2N7002

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BS170FTA by Zetex Plc

BS170FTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 60 V;
SI4532DY by Temic Semiconductors

SI4532DY

Temic Semiconductors

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Maximum Drain Current (ID): 3.9 A; No. of Terminals: 8;
AO3401AL by Alpha & Omega Semiconductor

AO3401AL

Alpha & Omega Semiconductor

AO3401AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 4.3A and RDS(on) of 0.044 ohm, making it suitable for various small outline surface mount designs.
IRLML2402TRPBF by International Rectifier

IRLML2402TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 3;
BSS138 by National Semiconductor

BSS138

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
BSS123 by Micro Commercial Components

BSS123

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 100 V; Qualification: Not Qualified;
2N7000 by Diotec Semiconductor Ag

2N7000

Diotec Semiconductor Ag

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Position: BOTTOM; JEDEC-95 Code: TO-92;
NTF3055-100T1G by Onsemi

NTF3055-100T1G

Onsemi

NTF3055-100T1G by Onsemi is a N-channel FET with 60V DS breakdown voltage and 3A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 2.1W, this MOSFET has a peak reflow temperature of 260°C and matte tin terminal finish.
FDV305N by Fairchild Semiconductor

FDV305N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 3;
NDS331N by National Semiconductor

NDS331N

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Application: SWITCHING;
MMBF170-7-F by Diodes Incorporated

MMBF170-7-F

Diodes Incorporated

Diodes Inc.'s MMBF170-7-F is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.3W power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in small outline packages.
2N7000 by Zetex Plc

2N7000

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;