Renesas Electronics - 2SJ326

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2SJ326 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SJ326
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Drain-Source On Resistance: .68 ohm; No. of Elements: 1;
Datasheet 2SJ326 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2 A
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 20 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .68 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 75 pF
JEDEC-95 Code: TO-251AA
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 2 A
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