Renesas Electronics - 2SJ327-Z-E1

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2SJ327-Z-E1 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SJ327-Z-E1
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Drain Current (Abs) (ID): 4 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet 2SJ327-Z-E1 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 20 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 4 A
Maximum Drain Current (Abs) (ID): 4 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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