Renesas Electronics - 2SJ598-ZK-E1-AZ

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2SJ598-ZK-E1-AZ by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SJ598-ZK-E1-AZ
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
Datasheet 2SJ598-ZK-E1-AZ Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 23 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 1 W
Maximum Drain-Source On Resistance: .19 ohm
Maximum Feedback Capacitance (Crss): 50 pF
JEDEC-95 Code: TO-252
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Peak Reflow Temperature (C): NOT SPECIFIED
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