Renesas Electronics - 2SJ602(0)-ZJ-E1-AZ

  1. Home
  2. Renesas Electronics - 2SJ602(0)-ZJ-E1-AZ
2SJ602(0)-ZJ-E1-AZ by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SJ602(0)-ZJ-E1-AZ
Description Other Transistors;
Datasheet 2SJ602(0)-ZJ-E1-AZ Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BDX53C by Tt Electronics Plc

BDX53C

Tt Electronics Plc

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
BC847 by Sinyork

BC847

Sinyork

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
BDX53C by Thomson Consumer Electronics

BDX53C

Thomson Consumer Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
MPSA92 by Sinyork

MPSA92

Sinyork

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
BD139 by Telefunken Microelectronics

BD139

Telefunken Microelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP42C by Sinyork

TIP42C

Sinyork

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP31C by Inchange Semiconductor

TIP31C

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
2N2905A by Tesla Elektronicke Soucastky

2N2905A

Tesla Elektronicke Soucastky

2N2905A by Tesla Elektronicke Soucastky is a PNP transistor with a maximum power dissipation of 0.6 W and a minimum DC current gain of 50. It operates at a maximum temperature of 175 °C and has a maximum collector current of 0.6 A. It has a nominal transition frequency of 200 MHz and is commonly used in other function applications requiring a single configuration.
TIP32C by Jiangsu Changjiang Electronics Technology

TIP32C

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;
2N2222A by Comset Semiconductors

2N2222A

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
TIP111 by Harris Semiconductor

TIP111

Harris Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;
TIP29C by North American Philips Discrete Products Div

TIP29C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
IRF640 by Jiangsu Changjiang Electronics Technology

IRF640

Jiangsu Changjiang Electronics Technology

Other Transistors;
TIP125 by Comset Semiconductors

TIP125

Comset Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
MPS-A42 by General Electric Solid State

MPS-A42

General Electric Solid State

MPS-A42 by General Electric Solid State is an NPN transistor with a max power dissipation of 0.625W and a min DC current gain of 40. It operates at temperatures up to 150°C, with a max collector current of 0.5A. This transistor is commonly used in applications requiring high frequency operation, such as RF amplification circuits.
BD679A by Philips Semiconductors

BD679A

Philips Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
BC546B by Shanghai Lunsure Electronic Technology

BC546B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N3055 by Plessey Semiconductors Discrete Components Div

2N3055

Plessey Semiconductors Discrete Components Div

2N3055 by Plessey Semiconductors is an NPN transistor with a max power dissipation of 115W and a min DC current gain of 20. It can handle a max collector current of 15A and has a nominal transition frequency of 2.5MHz. This transistor is commonly used in various applications requiring high power amplification or switching capabilities.
BC547C by Tt Electronics Plc

BC547C

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC846B by Shanghai Lunsure Electronic Technology

BC846B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;