2SJ621-T1B-AT by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SJ621-T1B-AT
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .062 ohm;
Datasheet	2SJ621-T1B-AT Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3.5 A
Sub-Category:	Other Transistors
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	12 V
Maximum Power Dissipation (Abs):	1.25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	3.5 A
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.062 ohm

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