Renesas Electronics - 2SJ649-AZ

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2SJ649-AZ by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SJ649-AZ
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Drain Current (Abs) (ID): 20 A; Maximum Drain Current (ID): 20 A;
Datasheet 2SJ649-AZ Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 25 W
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 20 A
Maximum Drain Current (Abs) (ID): 20 A
Sub-Category: Other Transistors
Peak Reflow Temperature (C): 260
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
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