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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 2SK2596BXTL-E |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR; |
| Datasheet | 2SK2596BXTL-E Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 20 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .4 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 3 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-F3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 17 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | .4 A |
| Peak Reflow Temperature (C): | 260 |
