2SK278 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SK278
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	2SK278 Datasheet

NAME	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	7 A
Maximum Pulsed Drain Current (IDM):	10 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	2
Maximum Power Dissipation (Abs):	100 W
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1.5 ohm
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	400 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	7 A

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