Renesas Electronics - 2SK3408-T1B-A

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2SK3408-T1B-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK3408-T1B-A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; JESD-609 Code: e6; Terminal Position: DUAL;
Datasheet 2SK3408-T1B-A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .2 W
Maximum Drain-Source On Resistance: .26 ohm
Maximum Feedback Capacitance (Crss): 30 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e6
Minimum DS Breakdown Voltage: 43 V
Maximum Drain Current (Abs) (ID): 1 A
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