Renesas Electronics - 2SK3577-T1B-AT

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2SK3577-T1B-AT by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK3577-T1B-AT
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet 2SK3577-T1B-AT Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.25 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3.5 A
Maximum Drain Current (Abs) (ID): 3.5 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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