2SK3740-ZK-E1-AZ/JM by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SK3740-ZK-E1-AZ/JM
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .16 ohm;
Datasheet	2SK3740-ZK-E1-AZ/JM Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	20 A
Maximum Pulsed Drain Current (IDM):	60 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	100 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	1.5 W
Maximum Drain-Source On Resistance:	.16 ohm
Avalanche Energy Rating (EAS):	40 mJ
Maximum Feedback Capacitance (Crss):	170 pF
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	250 V

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