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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 2SK660 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): .1 W; JESD-30 Code: R-PSIP-T3; Field Effect Transistor Technology: JUNCTION; |
| Datasheet | 2SK660 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | JUNCTION |
| Maximum Feedback Capacitance (Crss): | 3 pF |
| Maximum Drain Current (ID): | .01 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| JESD-609 Code: | e0 |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | .1 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | DEPLETION MODE |
| Maximum Operating Temperature: | 125 Cel |
