Renesas Electronics - 2SK679A

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2SK679A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK679A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .75 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .5 A;
Datasheet 2SK679A Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .75 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .5 A
Maximum Drain Current (Abs) (ID): .5 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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