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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | 3SK135A-KS |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .006 A; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): .025 A; |
Datasheet | 3SK135A-KS Datasheet |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 16 dB |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Feedback Capacitance (Crss): | .03 pF |
Maximum Drain Current (ID): | .006 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 20 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DUAL GATE, ENHANCEMENT MODE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | .025 A |
Maximum Power Dissipation Ambient: | .2 W |