Renesas Electronics - 3SK223

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3SK223 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 3SK223
Description N-CHANNEL; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (ID): .025 A; Maximum Power Dissipation Ambient: .2 W; Maximum Drain Current (Abs) (ID): .025 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR;
Datasheet 3SK223 Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 125 Cel
Maximum Drain Current (ID): .025 A
Maximum Drain Current (Abs) (ID): .025 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .2 W
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