3SK231U1D by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	3SK231U1D
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (Abs) (ID): .025 A;
Datasheet	3SK231U1D Datasheet

NAME	DESCRIPTION
Maximum Power Dissipation (Abs):	.2 W
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
No. of Elements:	1
Operating Mode:	DUAL GATE, ENHANCEMENT MODE
Maximum Operating Temperature:	125 Cel
Maximum Drain Current (ID):	.025 A
Maximum Drain Current (Abs) (ID):	.025 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES

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