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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 3SK243 |
| Description | N-CHANNEL; Maximum Drain Current (ID): .025 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .2 W; Maximum Drain Current (Abs) (ID): .025 A; |
| Datasheet | 3SK243 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Drain Current (ID): | .025 A |
| Maximum Drain Current (Abs) (ID): | .025 A |
| Sub-Category: | FET RF Small Signal |
| Polarity or Channel Type: | N-CHANNEL |
| Maximum Power Dissipation Ambient: | .2 W |
