Renesas Electronics - 3SK254

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3SK254 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 3SK254
Description N-CHANNEL; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (ID): .025 A; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (Abs) (ID): .025 A; Maximum Power Dissipation Ambient: .13 W;
Datasheet 3SK254 Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 125 Cel
Maximum Drain Current (ID): .025 A
Maximum Drain Current (Abs) (ID): .025 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .13 W
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