Renesas Electronics - 71V3556SA150BGG

  1. Home
  2. Renesas Electronics - 71V3556SA150BGG
71V3556SA150BGG by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 71V3556SA150BGG
Description ZBT SRAM; Peak Reflow Temperature (C): 260; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu); JESD-609 Code: e1; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet 71V3556SA150BGG Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): 260
Memory IC Type: ZBT SRAM
Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
JESD-609 Code: e1
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

R1LV3216RSA-5SI#B0 by Renesas Electronics

R1LV3216RSA-5SI#B0

Renesas Electronics

Renesas Electronics' R1LV3216RSA-5SI#B0 is a 2MX16 SRAM with a memory density of 33554432 bit. It operates asynchronously at a max access time of 55 ns and has a small outline, thin profile package style. It is commonly used in industrial applications requiring fast and reliable data storage.
AS7C34098A-12TCN by Alliance Semiconductor

AS7C34098A-12TCN

Alliance Semiconductor

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Input/Output Type: COMMON;
CY7C028-15AI by Cypress Semiconductor

CY7C028-15AI

Cypress Semiconductor

CY7C028-15AI by Cypress Semiconductor is a 64KX16 SRAM with 3-STATE output, operating at 5V. It has a max access time of 15ns and is ideal for industrial applications requiring fast and reliable memory storage. The package style is flatpack with low profile, fine pitch terminals.
DS1220AD-200+ by Analog Devices

DS1220AD-200+

Analog Devices

DS1220AD-200+ by Analog Devices is a 2Kx8 CMOS SRAM with 16384-bit memory density. Operating at 5V, it has a max access time of 200ns and consumes up to 75mA. Ideal for commercial applications requiring non-volatile memory in microelectronic assemblies.
71321LA25PFGI by Integrated Device Technology

71321LA25PFGI

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LQFP; Package Shape: SQUARE; Maximum Operating Temperature: 85 Cel;
DS1225Y-150 by Dallas Semiconductor

DS1225Y-150

Dallas Semiconductor

NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Position: DUAL;
CY14B116L-ZS25XI by Cypress Semiconductor

CY14B116L-ZS25XI

Cypress Semiconductor

NON-VOLATILE SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Seated Height: 1.194 mm;
CY14V104NA-BA45XIT by Infineon Technologies

CY14V104NA-BA45XIT

Infineon Technologies

Infineon's CY14V104NA-BA45XIT is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous mode, 45ns access time, and 1.8/3.3V power supplies. Ideal for applications requiring fast and reliable non-volatile memory storage in compact electronic devices.
DS1230Y-100 by Dallas Semiconductor

DS1230Y-100

Dallas Semiconductor

NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Position: DUAL;
7008L20PFGI8 by Renesas Electronics

7008L20PFGI8

Renesas Electronics

Renesas Electronics 7008L20PFGI8 is a 64Kx8 SRAM with 3-STATE output, operating at 5V. It features a low profile flatpack package with 0.5mm terminal pitch. Ideal for industrial applications requiring fast access time of 20ns and memory density of 524288 bits.
5962-8866204NA by Renesas Electronics

5962-8866204NA

Renesas Electronics

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Access Time: 45 ns;
5962-8866204NA by Logic Devices

5962-8866204NA

Logic Devices

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; JESD-30 Code: R-CDIP-T28;
HM628128BLFP-7 by Hitachi

HM628128BLFP-7

Hitachi

Hitachi's HM628128BLFP-7 is a 128Kx8 SRAM with 70ns access time, operating at 5V. It features a small outline package, Gull Wing terminals, and 3-state output for parallel applications in commercial temperature environments.
74F189SJ by National Semiconductor

74F189SJ

National Semiconductor

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
M5M51008DVP-70H by Mitsubishi Electric

M5M51008DVP-70H

Mitsubishi Electric

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; Qualification: Not Qualified;
CY7C131E-55JXCT by Cypress Semiconductor

CY7C131E-55JXCT

Cypress Semiconductor

CY7C131E-55JXCT by Cypress Semiconductor is a 1Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a 3-STATE output and operates in ASYNCHRONOUS mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.
CY7C1049DV33-10ZSXIT by Cypress Semiconductor

CY7C1049DV33-10ZSXIT

Cypress Semiconductor

CY7C1049DV33-10ZSXIT by Cypress Semiconductor is a 512Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a parallel interface, 10ns access time, and low standby current of 0.01Amp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.
IDT71V124SA12TYGI8 by Renesas Electronics

IDT71V124SA12TYGI8

Renesas Electronics

The Renesas Electronics IDT71V124SA12TYGI8 is a 128Kx8 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a max access time of 12ns and offers 131072 words of memory. Ideal for industrial applications requiring fast and reliable data storage with a compact small outline package design.
CY62167EV30LL-45ZXIT by Infineon Technologies

CY62167EV30LL-45ZXIT

Infineon Technologies

CY62167EV30LL-45ZXIT by Infineon: 1MX16 SRAM with 3.6V max supply, 45ns access time, and 1M word code. Ideal for industrial applications requiring fast, high-density memory in a small outline package.
IS61LV5128AL-10TLI by Integrated Silicon Solution

IS61LV5128AL-10TLI

Integrated Silicon Solution

IS61LV5128AL-10TLI by Integrated Silicon Solution is a 512Kx8 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a max access time of 10ns and is ideal for industrial applications requiring fast and reliable memory storage. The package style is small outline, thin profile, making it suitable for space-constrained designs.