Renesas Electronics - AMB0480XXHJG8

  1. Home
  2. Renesas Electronics - AMB0480XXHJG8
AMB0480XXHJG8 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number AMB0480XXHJG8
Description MEMORY CIRCUIT;
Datasheet AMB0480XXHJG8 Datasheet
NAME DESCRIPTION
Memory IC Type: MEMORY CIRCUIT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

DS6207 by Analog Devices

DS6207

Analog Devices

Analog Devices' DS6207 is a CMOS Memory Circuit with 384-bit memory density. It operates b/w 0 °C to 70°C, making it suitable for commercial applications. The IC has a rectangular shape with 5 terminals and uses Tin Lead terminal finish.
TMS27C32-120NL4 by Texas Instruments

TMS27C32-120NL4

Texas Instruments

Other Memory ICs;
TMS27C32-10NE4 by Texas Instruments

TMS27C32-10NE4

Texas Instruments

Other Memory ICs;
SN74LS600ADWR by Texas Instruments

SN74LS600ADWR

Texas Instruments

SN74LS600ADWR by Texas Instruments is a 16KX1 MEMORY CIRCUIT IC with TTL technology. It operates in ASYNCHRONOUS mode at 5V, offering 16384-bit memory density. This small outline package is ideal for applications requiring high-speed memory access and low power consumption.
DS1217M-512-25 by Analog Devices

DS1217M-512-25

Analog Devices

Analog Devices' DS1217M-512-25 is a 64Kx8 memory IC with CMOS technology. Operating at 5V, it has a memory density of 524288 bits and supports asynchronous mode. This MICROELECTRONIC ASSEMBLY package is ideal for commercial applications requiring reliable memory storage in the temperature range of 0 to 70 °C.
M36W108T100ZN1T by STMicroelectronics

M36W108T100ZN1T

STMicroelectronics

M36W108T100ZN1T by STMicroelectronics is a 1MX8 memory IC with 8388608 bit memory density. Operating in asynchronous mode, it has a supply voltage range of 2.7V to 3.6V and operates within a temperature range of 0 °C to 70°C. This rectangular package with grid array style is suitable for various commercial applications requiring high-density memory solutions.
SN74170NP1 by Texas Instruments

SN74170NP1

Texas Instruments

SN74170NP1 by Texas Instruments is a TTL technology IC with 16 terminals, operating at 5V. It has a rectangular package shape made of plastic/epoxy material. Ideal for commercial applications, it operates b/w 0°C to 70°C and features an in-line package style.
DS1204U-G02 by Analog Devices

DS1204U-G02

Analog Devices

Analog Devices' DS1204U-G02 is a 128-bit MEMORY CIRCUIT with CMOS technology. Operating at 5V, it has a temperature range of 0-70 °C in SYNCHRONOUS mode. This RECTANGULAR IC is ideal for applications requiring reliable memory storage and retrieval.
WD10EZEX by Western Digital

WD10EZEX

Western Digital

WD10EZEX by Western Digital is a 1TB memory circuit with CMOS technology, operating asynchronously at temperatures from 0 to 60°C. It has an organization of 1TX8, memory width of 8 bits, and a density of 8796093022208 bits. Ideal for applications requiring high-capacity storage in microelectronic assemblies.
DS28E80Q+U by Analog Devices

DS28E80Q+U

Analog Devices

MEMORY CIRCUIT; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn) - annealed; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
AT88SC018-SU-CN by Atmel

AT88SC018-SU-CN

Atmel

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Qualification: Not Qualified;
SMJ27C128-17J by Texas Instruments

SMJ27C128-17J

Texas Instruments

Other Memory ICs;
M36W108T120ZN5T by STMicroelectronics

M36W108T120ZN5T

STMicroelectronics

STMicroelectronics M36W108T120ZN5T is a 1MX8 memory IC with 1048576 words and 8388608 bit memory density. It operates in asynchronous mode, with a supply voltage range of 2.7V to 3.6V. This GRID ARRAY package has a very thin profile, suitable for applications requiring high memory capacity in compact spaces.
DS28E80Q+UW by Analog Devices

DS28E80Q+UW

Analog Devices

MEMORY CIRCUIT;
TMS27C291-45N by Texas Instruments

TMS27C291-45N

Texas Instruments

Other Memory ICs;
M36LLR8760T1ZAQ by STMicroelectronics

M36LLR8760T1ZAQ

STMicroelectronics

M36LLR8760T1ZAQ by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.
M36W108T100ZM1T by STMicroelectronics

M36W108T100ZM1T

STMicroelectronics

M36W108T100ZM1T by STMicroelectronics is a 1MX8 memory IC with 1048576 words and 8388608 bit memory density. Operating in asynchronous mode, it has a supply voltage range of 2.7V to 3.6V and temperature grade of commercial. This low-profile grid array package is suitable for various memory circuit applications.
TMS27PC49-5TL by Texas Instruments

TMS27PC49-5TL

Texas Instruments

Other Memory ICs;
DS2401AZ+ by Analog Devices

DS2401AZ+

Analog Devices

MEMORY CIRCUIT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
CY8C20110-SX2I by Infineon Technologies

CY8C20110-SX2I

Infineon Technologies

CY8C20110-SX2I by Infineon: 2Kx1 memory IC with 2048-bit density. Operates synchronously at 3V, -40 to 85°C temp range. Ideal for industrial applications requiring small outline package and dual terminal position.