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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | BA1A4Z-K |
| Description | PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum Turn Off Time (toff): 6000 ns; |
| Datasheet | BA1A4Z-K Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 200 ns |
| Sub-Category: | BIP General Purpose Small Signal |
| Polarity or Channel Type: | PNP |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 300 |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | .25 W |
| Maximum Collector-Emitter Voltage: | 50 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| Maximum Turn Off Time (toff): | 6000 ns |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
