Renesas Electronics - BA3L4Z

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BA3L4Z by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number BA3L4Z
Description Small Signal Bipolar Transistors;
Datasheet BA3L4Z Datasheet
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BC817-40W,115 by NXP Semiconductors

BC817-40W,115

NXP Semiconductors

NXP Semiconductors' BC817-40W,115 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 250, it can handle IC up to 0.5A. Operating at 150°C max temp, it has a transition frequency of 100MHz making it suitable for high-speed switching circuits.
BC847B by Zetex Plc

BC847B

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC847B,215 by Nexperia

BC847B,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by General Semiconductor

MMBT2222A

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
2N3906 by Lite-on Semiconductor

2N3906

Lite-on Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
BC817-40 by Fairchild Semiconductor

BC817-40

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
BC807-40,215 by Nexperia

BC807-40,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;
BC846B by National Semiconductor

BC846B

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by Diotec Semiconductor Ag

MMBT2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BC817,215 by Nexperia

BC817,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Maximum Time At Peak Reflow Temperature (s): 30;
MMBT2222ALT1 by Shandong Yiguang Electronic Joint Stock

MMBT2222ALT1

Shandong Yiguang Electronic Joint Stock

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
JANTX2N2222A by National Semiconductor

JANTX2N2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector-Base Capacitance: 8 pF; Package Style (Meter): CYLINDRICAL;
BC847CLT1G by Onsemi

BC847CLT1G

Onsemi

BC847CLT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.6V, hFE of 420, and fT of 100MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package.
BC547B by Taitron Components

BC547B

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;
SBC807-40LT1G by Onsemi

SBC807-40LT1G

Onsemi

SBC807-40LT1G by Onsemi is a PNP BJT transistor for switching applications. It has VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temperature of 150°C, it is ideal for small outline packages in automotive electronics.
MMBT2222A by Guangdong Kexin Industrial

MMBT2222A

Guangdong Kexin Industrial

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: PLASTIC/EPOXY;
JANTX2N2222AUB by Silicon Transistor

JANTX2N2222AUB

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by Taitron Components

MMBT3906

Taitron Components

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
BC547CTFR by Fairchild Semiconductor

BC547CTFR

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2907A by Hi-tron Semiconductor

2N2907A

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;