BB303C by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	BB303C
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Operating Mode: DUAL GATE, DEPLETION MODE; No. of Terminals: 4;
Datasheet	BB303C Datasheet

NAME	DESCRIPTION
Minimum Power Gain (Gp):	12 dB
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Feedback Capacitance (Crss):	.05 pF
Maximum Drain Current (ID):	.025 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	7 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DUAL GATE, DEPLETION MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	.025 A

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