Renesas Electronics - FX6KMJ-06-A8

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FX6KMJ-06-A8 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number FX6KMJ-06-A8
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 6 A;
Datasheet FX6KMJ-06-A8 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 24 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .37 ohm
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