Renesas Electronics - GA1F4Z-L65

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GA1F4Z-L65 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number GA1F4Z-L65
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200; Transistor Element Material: SILICON;
Datasheet GA1F4Z-L65 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .15 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
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