Renesas Electronics - GA4A4L-A

  1. Home
  2. Renesas Electronics - GA4A4L-A
GA4A4L-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number GA4A4L-A
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G3;
Datasheet GA4A4L-A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 90
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

ULN2003AIPWRG4 by Texas Instruments

ULN2003AIPWRG4

Texas Instruments

ULN2003AIPWRG4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. This surface-mount transistor in a small outline package is made of silicon with Gull Wing terminals.
2N2907A by Siemens

2N2907A

Siemens

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
JANTX2N2222AUA/TR by Microsemi

JANTX2N2222AUA/TR

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Terminal Form: NO LEAD; Terminal Position: DUAL;
MMBT5551LT1G by Onsemi

MMBT5551LT1G

Onsemi

MMBT5551LT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.2V, hFE of 30, and IC of 0.06A. Ideal for switching applications, it operates b/w -55 to 150°C with a max VCE of 160V. Its small outline package makes it suitable for surface mount designs.
BC847C,215 by Nexperia

BC847C,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2219A by Semiconductor Technology

2N2219A

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by Lite-on Semiconductor

MMBT3906

Lite-on Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;
BC547B by Crimson Semiconductor

BC547B

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2222A by Raytheon Semiconductor

2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;
2N2907A by Itt Semiconductor

2N2907A

Itt Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3904TAR by Fairchild Semiconductor

2N3904TAR

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2219A by General Transistor

2N2219A

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC847AE6327HTSA1 by Infineon Technologies

BC847AE6327HTSA1

Infineon Technologies

BC847AE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 110, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it operates at up to 150°C and has a collector current of 0.1A.
2N3904TA by Rochester Electronics

2N3904TA

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;
BC817-40W,135 by Nexperia

BC817-40W,135

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
MMBT2222ALT1 by Db Lectro

MMBT2222ALT1

Db Lectro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
JANTX2N2222A by Raytheon Semiconductor

JANTX2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Terminal Form: WIRE;
2N2222A by Hi-tron Semiconductor

2N2222A

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847C by STMicroelectronics

BC847C

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC547C by Fairchild Semiconductor

BC547C

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;