Renesas Electronics - H5N2522FP-E0-E#T2

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H5N2522FP-E0-E#T2 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number H5N2522FP-E0-E#T2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 12 A;
Datasheet H5N2522FP-E0-E#T2 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 35 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 12 A
Maximum Drain Current (Abs) (ID): 12 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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