H7P1002DS-E by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	H7P1002DS-E
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PSSO-G2;
Datasheet	H7P1002DS-E Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	120 pF
Maximum Drain Current (ID):	15 A
Maximum Pulsed Drain Current (IDM):	60 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	100 V
Maximum Power Dissipation (Abs):	30 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.15 ohm

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