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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | HAF2015RJ |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified; |
| Datasheet | HAF2015RJ Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 2 W |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (ID): | 2 A |
| Maximum Drain Current (Abs) (ID): | 2 A |
| Sub-Category: | FET General Purpose Power |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









