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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | HAF2015RJ |
Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified; |
Datasheet | HAF2015RJ Datasheet |
NAME | DESCRIPTION |
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Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 2 W |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Operating Temperature: | 175 Cel |
Maximum Drain Current (ID): | 2 A |
Maximum Drain Current (Abs) (ID): | 2 A |
Sub-Category: | FET General Purpose Power |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |