Renesas Electronics - HAT2126RP

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HAT2126RP by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HAT2126RP
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 12 A; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G11;
Datasheet HAT2126RP Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 96 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 11
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G11
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .027 ohm
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