Renesas Electronics - HAT3015T-EL-E

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HAT3015T-EL-E by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HAT3015T-EL-E
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
Datasheet HAT3015T-EL-E Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .5 A
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 5.5 ohm
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .5 A
Peak Reflow Temperature (C): NOT SPECIFIED
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