Renesas Electronics - HAT3018R-EL-E

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HAT3018R-EL-E by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HAT3018R-EL-E
Description N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet HAT3018R-EL-E Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 3 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 6 A
Maximum Drain Current (Abs) (ID): 6 A
Sub-Category: Other Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
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